Transistor with orange and red dot. The KT315 transistor is a miracle of Soviet electronics. BC847C bipolar high frequency npn transistor reference

Perhaps there is no more or less complex electronic device produced in the USSR during the seventies, eighties and nineties, in the circuit of which the KT315 transistor would not be used. He has not lost popularity to this day.

The designation uses the letter K, meaning "silicon", like most semiconductor devices manufactured since that time. The number "3" means that the KT315 transistor belongs to the group of low-power broadband devices.

The plastic case did not imply high power, but was cheap.

The KT315 transistor was produced in two versions, flat (orange or yellow) and cylindrical (black).

In order to make it more convenient to determine how to mount it, a bevel is made on its “front” side in a flat version, the collector is in the middle, the base is on the left, the collector is on the right.

The black transistor had a flat cut, if you place the transistor towards you, then the emitter is on the right, the collector is on the left, and the base is in the middle.

The marking consisted of a letter, depending on the allowable supply voltage, from 15 to 60 volts. The power also depends on the letter, it can reach 150 mW, and this is with microscopic dimensions for those times - the width is seven, the height is six, and the thickness is less than three millimeters.

The KT315 transistor is high-frequency, this explains the breadth of its application. up to 250 MHz guarantees its stable operation in radio circuits of receivers and transmitters, as well as range amplifiers.

Conductivity - reverse, n-p-n. For a pair, when using a push-pull amplification circuit, KT361 was created, with direct conduction. Outwardly, these "twin brothers" practically do not differ, only the presence of two black marks indicates p-n-p conductivity. Another marking option, the letter is located exactly in the middle of the case, and not on the edge.

For all its advantages, the KT315 transistor also has a disadvantage. Its terminals are flat, thin, and break off very easily, so installation should be done very carefully. However, even after spoiling the part, many radio amateurs managed to fix it by sawing the body a little and “dipping” the wire, although this is difficult, and there was no special point.

The case is so peculiar that it accurately indicates the Soviet origin of the KT315. You can find an analogue for it, for example, BC546V or 2N9014 - from imports, KT503, KT342 or KT3102 - from our transistors, but the record low cost makes such tricks meaningless.

Billions of KT315s have been produced, and although there are microcircuits in which tens and hundreds of such semiconductor devices are built in our time, they are sometimes still used to assemble simple auxiliary circuits.

The transistor is the main component of any electrical circuit. It is a kind of amplifying key. At the heart of this semiconductor device is a silicon or germanium crystal. Transistors are unipolar and bipolar and, accordingly, field and bipolar. According to the type of conductivity, they are of two types - direct and reverse. For novice radio amateurs, the main problem is recognizing and decoding the encoding of these elements. In our article, we will consider the main types of recording of both domestic and foreign products, and also analyze what the marking of transistors means.

Recording types

Transistor manufacturers use two main types of encryption - color marking and code marking. However, neither one nor the other have uniform standards. Each plant producing semiconductor devices (transistors, diodes, zener diodes, etc.) adopts its own code and color designations. You can find transistors of the same group and type, manufactured by different factories, and they will be labeled differently. Or vice versa: the elements will be different, and the designations on them will be identical. In such cases, they can be distinguished only by additional features. For example, by the length of the emitter and collector leads, or by the color of the opposite (or end) surface. Marking is no different from marks on other devices. The situation is the same with foreign-made semiconductor elements: each manufacturer uses its own types of designations.

Transistors in a KT-26 package

Consider what the marking of domestically produced transistors means. This package type is the most popular among semiconductor manufacturers. It has the shape of a cylinder with one bevelled side, three leads coming out of the bottom base. In this case, the principle of mixed marking is used, containing both code symbols and color symbols. A colored dot is applied to the upper base, indicating a transistor group, and a code symbol or a colored dot, corresponding to the type of device, is applied to the beveled side. In addition to the type, the year and month of issue can be applied.

To designate a group, the following color marking of transistors is used: group A corresponds to a dark red dot, B - yellow, C - dark green, D - blue, D - blue, E - white, G - dark brown, I - silver, K - orange, L - light tobacco, M - gray.

The type is designated by the symbols and colors indicated below.

Marking of the year and month of manufacture

In accordance with GOST 25486-82, two letters or a letter and a number are used to designate a date. The first character corresponds to the year and the second to the month. This type of coding is used not only for transistors, but also for other domestic semiconductor elements. On foreign instruments, the date is indicated by four digits, the first two of which correspond to the year, and the last to the week number. Consider what the code marking of transistors corresponding to the date of manufacture means. Year of issue / symbol: 1986 - U, 1987 - V, 1988 - W, 1989 - X, 1990 - A, 1991 - B, 1992 - C, 1993 - D, 1994 - E, 1995 - F, 1996 - H, 1997 - I, 1998 - K, 1999 - L, 2000 - M, etc. Month of release: the first nine months correspond to numbers from 1 to 9 (January - 1, February - 2), and the last - to the initial letters of the word: October - Oh, November is N, December is D.

Transistors in a case type KT-27

It is customary to apply either an alphanumeric code or a cipher consisting of geometric shapes on these semiconductor elements. Consider what the graphic marking of transistors means.

KT972A - one "lying" rectangle.
KT972B - two rectangles: the left one lies, the right one stands.
KT973A - one square.
KT973B - two squares.
KT646A - one triangle.
KT646B - circle on the left, triangle on the right.

In addition, there is also a marking of the end of the case, which is opposite to the conclusions:

KT 814 - gray-beige;
KT 815 - lilac-violet or gray;
KT 816 - rose red;
KT 817 - gray-green;
KT 683 - purple;
KT9115 - blue.

Transistors of the KT814-817 series of group B can only be marked by coloring the end, without applying a symbolic code.

European PRO-ELECTRON system

The marking of transistors and other semiconductor devices from European manufacturers is carried out as follows. The code is a symbolic entry. The first letter means the semiconductor material: silicon, germanium, etc. Silicon is the most common, it corresponds to the letter B. The next character is the type of device. Next is the serial number of the product. This number has several ranges. For example, if numbers from 100 to 999 are indicated, then these elements refer to general-purpose products, and if they are preceded by a letter (Z10 - A99), then these semiconductors are considered special or industrial parts. In addition, an additional device modification symbol can be added to the general coding. It is determined directly by the manufacturer of semiconductor elements.

First character (material): A - germanium, B - silicon, C - gallium arsenide, R - cadmium sulfide. The second element means the type of transistor: C - low-power low-frequency; D - powerful low-frequency; F - low-power high-frequency; G - several devices in one case; L - powerful high-frequency; S - low-power switching; U - powerful switching.

American JEDEC system

American semiconductor manufacturers use a four-element character encoding. The first digit means the number of pn junctions: 1 - diode; 2 - transistor; 3 - thyristor; 4 - optocoupler. The second letter represents the group. The third character is the element (range 100 to 9999). The fourth character is a letter corresponding to the device modification.

Japanese JIS system

This system consists of symbols and contains five elements. The first digit corresponds to the type of semiconductor device: 0 - photodiode or phototransistor; 1 - diode; 2 - transistor. The second element is the letter S, it is placed on all elements. The next letter corresponds to the type of transistor: A - high-frequency PNP; B - low-frequency PNP; C - high frequency NPN; D - low frequency NPN; H - unijunction; J - field with N-channel; K - field with P-channel. This is followed by the serial number of the product (10 - 9999). The last, fifth, element is the device (often it may be absent). Sometimes a sixth character is also applied - this is an additional index (letters N, M or S), which means the requirement to comply with special standards. In the Japanese system, the color marking of transistors is not used.

SMD elements

The marking of SMD transistors is only symbolic. Due to the miniature size of these elements, color coding is not used. There is no single encryption standard for them. Each manufacturing plant uses its own symbols. The alphanumeric code in this case may contain from one to three letters or numbers. Each plant produces its own marking tables for semiconductor elements.

15.04.2018

Silicon epitaxial-planar n-p-n transistors of the type KT315 and KT315-1. They are intended for use in amplifiers of high, intermediate and low frequencies, they are directly used in radio-electronic equipment manufactured for civil engineering and for export. Transistors KT315 and KT315-1 are produced in a plastic case with flexible leads. The KT315 transistor is manufactured in the KT-13 package. Subsequently, KT315 began to be produced in the KT-26 package (a foreign analogue of TO92), transistors in this package received an additional "1" in the designation, for example, KT315G1. The housing reliably protects the transistor crystal from mechanical and chemical damage. Transistors KT3I5H and KT315H1 are designed for use in color television. Transistors KT315P and KT315R1 are designed for use in the video recorder "Electronics - VM". Transistors are manufactured in UHL climatic version and in a single version, suitable for both manual and automated assembly of equipment.

The KT315 transistor was produced by the following enterprises: Elektropribor, Fryazino, Kvazar, Kiev, Continent, Zelenodolsk, Quartzite, Ordzhonikidze, Elkor Production Association, Republic of Kabardino-Balkaria, Nalchik, NIIPP, Tomsk, PO "Electronics", Voronezh, in 1970, their production was also transferred to Poland to the Unitra CEMI enterprise.

As a result of negotiations in 1970, in terms of cooperation, the production of KT315 transistors was transferred to Poland by the Voronezh Association "Electronics". To do this, the workshop was completely dismantled in Voronezh, and in the shortest possible time, together with a supply of materials and components, it was transported, assembled and launched in Warsaw. This research and production center for electronics, established in 1970, was a semiconductor manufacturer in Poland. Unitra CEMI eventually went bankrupt in 1990, leaving the Polish microelectronics market open to foreign companies. Website of the museum of the Unitra CEMI enterprise: http://cemi.cba.pl/. By the end of the existence of the USSR, the total number of KT315 transistors produced exceeded 7 billion.

The KT315 transistor is produced to this day by a number of enterprises: CJSC Kremniy, Bryansk, SKB Elkor, Republic of Kabardino-Balkaria, Nalchik, NIIPP plant, Tomsk. The KT315-1 transistor is produced by: Kremniy CJSC, Bryansk, Transistor Plant, Republic of Belarus, Minsk, Eleks JSC, Aleksandrov, Vladimir Region.

An example of the designation of KT315 transistors when ordering and in the design documentation of other products: “KT315A transistor ZhK.365.200 TU / 05”, for KT315-1 transistors: “KT315A1 transistor ZhK.365.200 TU / 02”.

Brief technical characteristics of transistors KT315 and KT315-1 are presented in table 1.

Table 1 - Brief technical characteristics of transistors KT315 and KT315-1

Type	Structure	P K max , P K * t. max, mW	f gr, MHz	U KBO max , U КЭR*max, IN	U EBO max , IN	I K max , mA	I KBO, uA	h 21e, h 21E*	C K, pF	r CE us, Ohm	r b, Ohm	τ to, ps
KT315A1	n-p-n	150	≥250	25	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315B1	n-p-n	150	≥250	20	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315В1	n-p-n	150	≥250	40	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315G1	n-p-n	150	≥250	35	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315D1	n-p-n	150	≥250	40	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315Е1	n-p-n	150	≥250	35	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315Zh1	n-p-n	100	≥250	15	6	100	≤0,5	30...250 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315I1	n-p-n	100	≥250	60	6	100	≤0,5	30 (10V; 1mA)	≤7	≤20	≤40	≤300
KT315H1	n-p-n	150	≥250	20	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	–	–	–
KT315R1	n-p-n	150	≥250	35	6	100	≤0,5	150...350 (10 V; 1 mA)	≤7	–	–	–
KT315A	n-p-n	150 (250*)	≥250	25	6	100	≤0,5	30...120* (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315B	n-p-n	150 (250*)	≥250	20	6	100	≤0,5	50...350* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315V	n-p-n	150 (250*)	≥250	40	6	100	≤0,5	30...120* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315G	n-p-n	150 (250*)	≥250	35	6	100	≤0,5	50...350* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315D	n-p-n	150 (250*)	≥250	40* (10k)	6	100	≤0,6	20...90 (10 V; 1 mA)	≤7	≤30	≤40	≤1000
KT315E	n-p-n	150 (250*)	≥250	35* (10k)	6	100	≤0,6	50...350* (10 V; 1 mA)	≤7	≤30	≤40	≤1000
KT315Zh	n-p-n	100	≥250	20* (10k)	6	50	≤0,6	30...250* (10 V; 1 mA)	≤7	≤25	–	≤800
KT315I	n-p-n	100	≥250	60* (10k)	6	50	≤0,6	≥30* (10V; 1mA)	≤7	≤45	–	≤950
KT315N	n-p-n	150	≥250	35* (10k)	6	100	≤0,6	50...350* (10 V; 1 mA)	≤7	≤5,5	–	≤1000
KT315R	n-p-n	150	≥250	35* (10k)	6	100	≤0,5	150...350* (10 V; 1 mA)	≤7	≤20	–	≤500

Note:
1. I KBO - collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output, measured at U KB = 10 V;
2. I K max - the maximum allowable DC collector current;
3. U KBO max is the collector-base breakdown voltage at a given collector reverse current and an open emitter circuit;
4. U EBO max - breakdown voltage emitter-base at a given reverse current of the emitter and an open collector circuit;
5. U КЭR max – collector-emitter breakdown voltage at a given collector current and a given (final) resistance in the base-emitter circuit;
6. P K.t max - constant power dissipation of the collector with a heat sink;
7. P K max - the maximum allowable constant power dissipation of the collector;
8. r b - base resistance;
9. r KE us - saturation resistance between the collector and emitter;
10. C K - capacitance of the collector junction, measured at U K = 10 V;
11. f grp - cutoff frequency of the current transfer coefficient of the transistor for the circuit with a common emitter;
12. h 2le - voltage feedback coefficient of the transistor in the low signal mode for circuits with a common emitter and a common base, respectively;
13. h 2lЭ - for a circuit with a common emitter in a large signal mode;
14. τ to - the time constant of the feedback circuit at high frequency.

KT315 transistor dimensions

Housing type transistor KT-13. The mass of one transistor is not more than 0.2 g. The magnitude of the tensile force is 5 N (0.5 kgf). The minimum distance of the outlet bend from the body is 1 mm (marked as L1 in the figure). Soldering temperature (235 ± 5) °С, distance from the body to the soldering point 1 mm, soldering time (2 ± 0.5) s. The transistors must withstand the heat generated at the soldering temperature (260 ± 5) °C for 4 seconds. The conclusions must remain solderable for 12 months from the date of manufacture, subject to the modes and rules for soldering specified in the section "Operating Instructions". Transistors are resistant to alcohol-gasoline mixture (1:1). KT315 transistors are fireproof. The overall dimensions of the KT315 transistor are shown in Figure 1.

Figure 1 - Marking, pinout and overall dimensions of the KT315 transistor

Dimensions of the transistor KT315-1

Housing type transistor KT-26. The mass of one transistor is not more than 0.3 g. The minimum distance of the lead bend from the case is 2 mm (indicated as L1 in the figure). Soldering temperature (235 ± 5) °С, distance from the body to the soldering point at least 2 mm, soldering time (2 ± 0.5) s. Transistors KT315-1 are fireproof. The overall dimensions of the KT315-1 transistor are shown in Figure 2.

Figure 2 - Marking, pinout and overall dimensions of the KT315-1 transistor

transistor pinout

If you place the KT315 transistor with the marking away from you (as shown in Figure 1) with the pins down, then the left pin is the base, the central pin is the collector, and the right pin is the emitter.

If you place the KT315-1 transistor on the contrary with the marking towards you (as shown in Figure 2) with the pins also down, then the left pin is the emitter, the central pin is the collector, and the right pin is the base.

Transistor marking

Transistor KT315. The type of transistor is indicated on the label, and the group was indicated in the form of a letter on the case of the device. The case indicates the full name of the transistor or only the letter, which is shifted to the left edge of the case. The trade mark of the plant may not be indicated. The date of issue is put in a digital or coded designation (in this case, only the year of issue can be indicated). The dot in the transistor marking indicates its applicability - as part of color television. The old (produced before 1971) KT315 transistors were marked with a letter in the middle of the case. At the same time, the first issues were marked with only one capital letter, and around 1971 they switched to the usual two-line. An example of marking a KT315 transistor is shown in Figure 1. It should also be noted that the KT315 transistor was the first mass coded transistor in a miniature plastic case KT-13. The vast majority of KT315 and KT361 transistors (characteristics are the same as those of KT315, and p-n-p conductivity) were released in yellow or red-orange cases, pink, green and black transistors are much less common. In addition to the letter denoting the group, the trademark of the plant and the date of manufacture, the marking of transistors intended for sale also included a retail price, for example, “ts20k”, which meant the price of 20 kopecks.

Transistor KT315-1. The type of transistor is also indicated on the label, and the full name of the transistor is indicated on the case, and transistors can also be marked with a code mark. An example of marking a transistor KT315-1 is shown in Figure 2. The marking of a transistor with a code mark is shown in Table 2.

Table 2 - Marking of the KT315-1 transistor with a code mark

transistor type	Marking mark on the cut side surface of the body	Marking mark at the end of the body
KT315A1	green triangle	red dot
KT315B1	green triangle	yellow dot
KT315В1	green triangle	green dot
KT315G1	green triangle	blue dot
KT315D1	green triangle	blue dot
KT315Е1	green triangle	white dot
KT315Zh1	green triangle	two red dots
KT315I1	green triangle	two yellow dots
KT315H1	green triangle	two green dots
KT315R1	green triangle	two blue dots

Instructions for the use and operation of transistors

The main purpose of transistors is to work in amplifying stages and other circuits of electronic equipment. It is allowed to use transistors manufactured in the usual climatic version in equipment designed for operation in all climatic conditions, when the transistors are coated directly in the equipment with varnishes (in 3 - 4 layers) of the UR-231 type according to TU 6-21-14 or EP-730 according to GOST 20824 followed by drying. Permissible value of the static potential is 500 V. The minimum allowable distance from the case to the place of tinning and soldering (along the lead length) is 1 mm for the KT315 transistor and 2 mm for the KT315-1 transistor. The number of admissible resoldering of leads during assembly (assembly) operations is one.

External influencing factors

Mechanical impacts for group 2 table 1 in GOST 11630, including:
– sinusoidal vibration;
– frequency range 1-2000 Hz;
– acceleration amplitude 100 m/s 2 (10g);
– linear acceleration 1000 m/s 2 (100g).

Climatic impacts - according to GOST 11630, including: increased operating temperature of the medium 100 °C; reduced operating temperature of the medium minus 60 °С; change of medium temperature from minus 60 to 100 °С. For KT315-1 transistors, the change in the temperature of the medium from minus 45 to 100 °C

Transistor Reliability

The failure rate of transistors during the operating time is more than 3×10 -7 1/h. Operating time of transistors t n \u003d 50,000 hours. 98% transistor shelf life of 12 years. The packaging must protect the transistors from static electricity.

Foreign analogues of the transistor KT315

Foreign analogues of the KT315 transistor are shown in Table 3.

Table 3 - Foreign analogues of the KT315 transistor

Domestic transistor	Foreign analogue	Company manufacturer	A country manufacturer
KT315A	BFP719	Unitra CEMI	Poland
KT315B	BFP720	Unitra CEMI	Poland
KT315V	BFP721	Unitra CEMI	Poland
KT315G	BFP722	Unitra CEMI	Poland
KT315D	2SC641	Hitachi	Japan
KT315E	2N3397	Central Semiconductor	USA
KT315Zh	2N2711	Sprague electric corp.	USA
KT315Zh	BFY37, BFY37i	ITT Intermetall GmbH	Germany
KT315I	2SC634	New Jersey Semiconductor	USA
KT315I	2SC634	Sony	Japan
KT315N	2SC633	Sony	Japan
KT315R	BFP722	Unitra CEMI	Poland

The foreign prototype of the KT315-1 transistor is the 2SC544, 2SC545, 2SC546 transistors, Sanyo Electric, Japan.

Main technical characteristics

The main electrical parameters of KT315 transistors upon acceptance and delivery are given in Table 4. The maximum permissible operating modes of the transistor are given in Table 5. The current-voltage characteristics of KT315 transistors are shown in Figures 3 - 8. The dependences of the electrical parameters of KT315 transistors on the modes and conditions of their operation are presented in figures 9 - 19.

Table 4 - Electrical parameters of KT315 transistors upon acceptance and delivery

Parameter name (measurement mode) units	Letter designation	Norm parameter		Temperature, °C
		at least	no more
Limit voltage (I C =10 mA), V KT315A, KT315B, KT315Zh, KT315N KT315V, KT315D, KT315I KT315G, KT315E, KT315R	U (CEO)	15 30 25	–	25
(I C =20 mA, I B =2 mA), V KT315A, KT315B, KT315V, KT315G, KT315R KT315D, KT315E KT315Zh KT315I	U CEsat	–	0,4 0,6 0,5 0,9
Collector-emitter saturation voltage (I C \u003d 70 mA, I B \u003d 3.5 mA), V KT315N	U CEsat	–	0,4
Base-emitter saturation voltage (I C =20 mA, I B =2 mA), V KT315A, KT315B, KT315V, KT315G, KT315N, KTZ I5P KT315D, KT315E KT315Zh KT315I	U BEsat	–	1,0 1,1 0,9 1,35
KT315A, KT315B, KT315V, KT315G, KT315N, KT315R KT315D, KT315E, KT315J, KG315I	I CBO	–	0,5 0,6	25, -60
Reverse collector current (U CB \u003d 10 V), μA KT3I5A KT315B, KT315V, KT315G, KT315N, KT315R KT315D, KT315E	I CBO	–	10 15	100
Reverse emitter current (U EB \u003d 5 V) μA KT315A - KG315E, KT315Zh, XT315N KT315I KT315R	I EBO	–	30 50 3	25
, (R BE =10 kOhm U CE =25 V), mA, KT3I5A (R BE \u003d 10 kOhm U CE \u003d 20 V), mA, KT315B, KT315N (R BE \u003d 10 kOhm U CE \u003d 40 V), mA KT315V (R BE \u003d 10 kOhm U CE \u003d 35 V), mA, KT315G (R BE \u003d 10 kOhm U CE \u003d 40 V), mA, KT315D (R BE \u003d 10 kOhm U CE \u003d 35 V), mA, KT315E	I CER	–	0,6 0,6 0,6 0,6 1,0 1,0 0,005	25
(R BE \u003d 10 kOhm U CE \u003d 35 V), mA, KT315R	I CER	–	0,01	100
Collector-emitter reverse current (U CE =20 V), mA, KT315ZH (U CE =60 V), mA, KT315I	I CES	–	0,01 0,1	25, -60
Collector-emitter reverse current (U CE =20 V), mA, KT3I5Ж (U CE =60 V), mA, KT3I5I	I CES	–	0,1 0,2	100
(U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KT315D KT315Zh KT315I KT315R	h 21E	30 50 20 30 30 150	120 350 90 250 – 350	25
Static current transfer ratio (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KT315D KT315Zh KT315I KT315R	h 21E	30 50 20 30 30 150	250 700 250 400 – 700	100
Static current transfer ratio (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KTZ15B, KT315G, KT315E, KT315N KT315D KT315Zh KT315I KT315R	h 21E	5 15 5 5 5 70	120 350 90 250 – 350	-60
Current transfer ratio module at high frequency (U CB = 10 V, I E = 5 mA, f = 100 MHz)	\|h 21E \|	2,5	–	25
collector junction capacitance (UCB = 10 V, f = 10 MHz), pF	C C	–	7	25

Table 5 - Maximum permissible operating modes of the KT315 transistor

Parameter, unit	Designation	Parameter norm
		KG315A	KG315B	KG315V	KG315G	KTZ15D	KG315E	KG315J	KG315I	KT315N	KT315R
Max. allowable DC collector-emitter voltage, (R BE = 10 kOhm), V 1)	U CERmax	25	20	40	35	40	35	–	–	20	35
Max. allowable constant collector-emitter voltage in the event of a short circuit in the emitter-base circuit, V 1)	U CES max	–	–	–	–	–	–	20	60	–	–
Max. allowable DC voltage collector-base, V 1)	U CB max	25	20	40	35	40	35	–	–	20	35
Max. allowable constant voltage emitter-base, V 1)	U EB max	6	6	6	6	6	6	6	6	6	6
Max. permissible DC collector current, mA 1)	I Cmax	100	100	100	100	100	100	100	100	100	100
Max. permissible constant power dissipation of the collector, mW 2)	PC max	200	200	200	200	200	200	200	200	200	200
Max. allowable transition temperature, ⁰С	t j max	125	125	125	125	125	125	125	125	125	125

Note:
1. For the entire operating temperature range.
2. At t atv from minus 60 to 25 °С. When the temperature rises above 25 °C, P C max is calculated by the formula:

where R t hjα is the total thermal resistance of the transition-environment, equal to 0.5 °C/mW.

Figure 3 - Typical input characteristic of transistors KT315A - KT315I, KT315N, KT315R

Figure 4 - Typical input characteristic of transistors KT315A - KT315I, KT315N, KT315R
at U CE \u003d 0, t atv \u003d (25 ± 10) ° С

Figure 5 - Typical output characteristics of transistors such as KT315A, KT315V, KT315D, KT315I
at t atv = (25±10) °С

Figure 6 - Typical output characteristics of transistors such as KT315B, KT315G, KT315E, KT315N
at t atv = (25±10) °С

Figure 7 - Typical output characteristics
transistor KT315Zh at t atv = (25±10) °С

Figure 8 - Typical output characteristics
transistor KT315R at t atv = (25±10) °С

Figure 9 - Dependence of the collector-emitter saturation voltage on the direct collector current for transistors of the type KT315A - KT315I, KT315N, KT315R at I C / I B = 10,
t atv \u003d (25 ± 10) ° С

Figure 10 - Dependence of the base-emitter saturation voltage on the DC collector current for transistors of the KT315A type - KT315I, KT315N, KT315R at I C / I B = 10, t atv = (25 ± 10) ° С

Figure 11 - Dependence of the static current transfer coefficient on the constant current of the emitter for transistors KT315A, KT315V, KT315D, KT315I at U CB = 10,
t atv \u003d (25 ± 10) ° С

Figure 12 - Dependence of the static current transfer coefficient on the direct current of the emitter for transistors KT315B, KT315G, KT315E, KT315N at U CB = 10,
t atv \u003d (25 ± 10) ° С

Figure 13 - Dependence of the static current transfer coefficient on the constant current of the emitter for the transistor KT315Zh at U CB = 10, t atv = (25±10) °С

Figure 14 - Dependence of the static current transfer coefficient on the constant current of the emitter for the KT315R transistor at U CB = 10, t atv = (25 ± 10) ° С

Figure 15 - Dependence of the module of the current transfer coefficient at high frequency on the direct current of the emitter at U CB = 10, f = 100 MHz, t atv = (25±10) °С

Figure 16 - Dependence of the time constant of the feedback circuit at high frequency on the collector-base voltage at I E = 5 mA, t atv = (25 ± 10) ° С for KT315A

Figure 17 - Dependence of the time constant of the feedback circuit at high frequency on the collector-base voltage at I E \u003d 5 mA, t atv \u003d (25 ± 10) ° С for KT315E, KT315V, KT315G, KT315N, KT315R

Figure 18 - Dependence of the time constant of the feedback circuit at high frequency on the emitter current at U CB = 10 V, f = 5 MHz, t atv = (25 ± 10) ° С for
KT315A

This is a real legend in the world of radio electronics! The KT315 transistor was developed in the Soviet Union and for decades held the palm among such technologies. Why did he deserve such recognition?

Transistor KT315

What can be said about this legend? KT315 is a silicon high-frequency low power bipolar transistor. He has n-p-n-conductivity. It is made in the KT-13 case. Due to its versatility, it has received the widest distribution in Soviet-made radio-electronic equipment. What is the analogue of the KT315 transistor? There are quite a few of them: BC847B, BFP722, 2SC634, 2SC641, 2SC380, 2SC388, BC546, KT3102.

Development

For the first time, the idea of creating such a device among Soviet scientists and engineers arose in 1966. Since it was created in order to subsequently turn it into mass production, the development of both the transistor itself and the equipment for its manufacture was entrusted to the Pulsar Research Institute, the Fryazinsky semiconductor plant and the design bureau located on its territory. 1967 was an active preparation and creation of conditions. And in 1968, the first electronic devices were released, which are now known as the KT315 transistor. It became the first mass-produced such device. The marking of KT315 transistors is as follows: initially, a letter was put in the upper left corner of the flat side, which denoted the group. Sometimes the date of manufacture was also indicated. A few years later, the production of complementary KT361 transistors with p-n-p conductivity began in the same package. To distinguish them in the middle of the upper part, a mark was placed. For the development of the KT315 transistor in 1973, the State Prize of the USSR was awarded.

Technology

When the KT315 transistor began to be produced, a new technology was simultaneously tested - planar-epitaxial. It implies that all device structures are created on the same side. What are the requirements of the KT315 transistor? The parameters of the source material must have the same conductivity type as the collector. And to begin with, the formation of the base region is carried out, and only then - the emitter. This technology was a very important milestone in the development of the Soviet radio-electronic industry, since it made it possible to get closer to the manufacture of integrated circuits without the use of a dielectric substrate. Until this device appeared, low-frequency devices were made according to the alloy method, and high-frequency devices - according to the diffusion method.

We can confidently say that the parameters that the completed device possessed were a real breakthrough for its time. Why do they say so about the KT315 transistor? Parameters - that's why they talked about him like that! So, if we compare it with the modern high-frequency germanium transistor GT308, then it exceeds it in power by 1.5 times. The cut-off frequency is more than 2 times, and the maximum collector current is generally 3 times. And at the same time, the KT315 transistor was much cheaper. He was able to replace the low-frequency MP37, because with equal power he had a higher base current transfer coefficient. Also, the best performance was in the maximum pulse current, and KT315 had superior temperature stability. Thanks to the use of silicon, this transistor could operate for tens of minutes at a moderate current, even if there was a solder melting point around. True, work in such conditions slightly worsened the characteristics of the device, but it did not fail irreversibly.

Applications and Complementary Technologies

The KT315 transistor has found wide application in audio, intermediate and high frequency amplifier circuits. An important addition was the development of complementary KT361. In pairs, they have found their application in transformerless push-pull circuits.

Conclusion

At one time, this device played a big role in the construction of various circuits. It even got to the point that in the shops for radio amateurs of the times of the Soviet Union they were sold not by the piece, but by weight. This was both an indicator of popularity and spoke of the production capacity that was directed towards creating such devices. In addition, they are so popular that radio amateurs still use these transistors in some circuits. No wonder, because you can buy them now. Although it is not always necessary to purchase - sometimes it is enough to disassemble equipment originally from the USSR.

Hello everyone! Since I have a plug for every barrel, I cannot ignore such an important topic!

Extract from Wikipedia with my additions:
- a type of silicon bipolar transistor, n-p-n conductivity, which is most widely used in Soviet radio-electronic equipment.
In 1966, A. I. Shokin (at that time the Minister of the Electronic Industry of the USSR) read the news in the Electronics magazine about the development in the USA of a transistor technologically adapted for mass production using the assembly method on a continuous tape on magnetic storage drums. The development of the transistor and equipment for production was undertaken by the Pulsar Research Institute, the Fryazinsky Semiconductor Plant and its Design Bureau. Already in 1967 (!) Preparations were made for the launch of mass production, and in 1968 (!) The first electronic devices based on KT315 were produced.
So KT315 became the first mass-produced cheap-consumer code-marked transistor in a miniature plastic case KT-13. On it, in the upper left corner (and sometimes in the upper right) of the flat side, a letter was placed indicating the group, the date of manufacture was indicated below (in digital form or letter encryption). There was also a symbol of the manufacturer.
The development of KT315 was awarded in 1973 by the State Prize of the USSR.
A few years later, in the same KT-13 package, they began to produce a transistor with p-n-p conductivity - KT361. To distinguish it from KT315, the letter denoting the group was placed in the middle of the upper part on the flat side of the case, it was also enclosed in a “dash”.

Here is from my stock:

Open in new window. Size 1600x1200 (for wallpapers)

Also pleased with their color variety:

Starting with dark orange and ending with black)))

And I have KT315 already in 1994.

In the illustration below, I provide an image of the transistor itself (in this case, KT315G on the left, KT361G on the right) and a conditional graphical display on the circuit diagrams of bipolar transistors of both conductivities.
The pinout is also indicated (it is the same for them), and the conclusions of the transistors are indicated on the graphic image - TO collector, B aza, E mitter.

Almost every board of domestic production (read the production of the once former USSR) used these cheap, low-power transistors. Having soldered them, the then radio amateurs successfully used these three-legged friends in their crafts. As practice shows, almost always they were serviceable. But still, sometimes “killed” ones also come across (one transition is broken / shorted - electrical resistance = 0, or is in a break - electrical resistance = infinity). Also rarely came across a factory defect (a completely new transistor was “dead”), and the marking from the category “automatic line adjuster in production, Uncle Vanya, before launching the next batch of transistors for “stamping”, grunted to restore strength 100-150 gr. »:)

It is simply not clear whether the letter on the transistor is on the left, or on the right. There were transistors with markings from the category “the letter is not on the left, not on the right, not in the middle”.))))

To combat these troubles, any serviceable device for checking PN transitions comes to our aid. With it, we can make the simplest test of transistors. As we know, NPN and PNP bipolar transistors can be conditionally (and only conditionally! No two separate diodes will NEVER replace a bipolar transistor!) Present as single PN junctions. We return to the illustration above and observe in the lower, left corner the equivalent of the NPN transistor KT315 displayed exclusively “for checking by the device” in the form of two diodes VD1, VD2.
Since the KT361 transistor of opposite conductivity is PNP, the diodes in its equivalent circuit simply change polarity (illustration below, right).
Let's move on to practice - we will check our beloved KT315 for serviceability. We take a multimeter which comes to hand.
One of my testers:

Turn on. A tester with automatic selection of measurement limits, but this will not hurt us :)
2 - set the switch to the "dialing" mode, measure semiconductors, measure electrical resistance.
3 - use the manual selection button to set the "semiconductor test" mode
1 - a conditional graphic display of the diode is displayed on the left of the LCD indicator.
It can be seen from the figure above that for NPN transistors (which is our KT315), when measuring the Base-Emitter and Base-Collector, the measuring device should show the presence of a PN junction (a conventional silicon diode in the open state in this case). If the probe of the tester with a negative potential (for all normal Chinese testers it is black) is connected to the base of the transistor, and the probe with a positive potential (standard - black) to the emitter or collector (which corresponds to the emitter-base and collector-base checks), then through conditional diodes, a negligible current will flow (reverse leakage current, usually microamps), which the device will not display, i.e. the diodes will be in the closed state - their resistance is equal to infinity. We try:

Base emitter check. The device shows an almost standard voltage drop across a silicon diode = 0.7V; at almost standard current for multimeters.

Base emitter check. Again, according to the transistor test drawing, we see the same voltage drop = 0.7V at the same PN junction.
Conclusion - with direct connection, both transitions are absolutely serviceable.
If the device showed a voltage drop close to zero or the tester squealed in the “dialing” mode, this would signal a short circuit in one of the tested transitions. If the device showed an infinite voltage drop or infinite resistance, this would signal an open in this measured transition.
The legs of the emitter - collector should also not "ring" in any of the directions.

Now let's check the PNP transistor for serviceability, in our case KT361.
From the same figure above (on the right, below), it can be seen that transistors of this conductivity have emitter-base and collector-base PN junctions (as I said exactly the opposite to the structure of an NPN transistor, the polarities of semiconductors change).
We check:

At the PN junction, the emitter-base drop is 0.7V. Further:

The collector-base is also 0.7V. There is no short circuit or break in any of the transitions. Diagnosis - the transistor is working. Let's solder!

Verse about KT315(lurkmore.ru/CT315)
You were created for HF
But soldered even in the ULF.
You monitored the voltage in the PSU,
And he ate from IP.
You worked in the GVCh and LNG,
You were even imprisoned in the UPC.
You are a good generator
Amplifier, switch.
You're worth every penny
But microchips have come to replace you.

In order to solve the problems of creating an electronic industry practically from scratch in the existing conditions and without the participation of world cooperation, it was necessary to think over a clear program with an integrated approach based on a combination of a deep understanding of the scientific and technical problems of electronics with an equally deep knowledge of the laws of industrial production. And such a program for the transformation of the electronic industry of the USSR into one of the most powerful branches of the national economy was endured, suffered and developed by the minister and his associates. As a result of its implementation, the Soviet Union for the period from 1960 to 1990. came in third place in the world in the production of electronic components (and in certain types, and the second and even first). The only country in the world that had the ability to fully provide all modern types of weapons with its own elemental base was the Soviet Union.
By the beginning of the 90s, the total output of KT315 transistors at four factories in the industry amounted to about 7 billion pieces, hundreds of millions were exported, a license for production technology and a set of equipment were sold abroad.

So the fairy tale is over, thank you for your attention,
Your:)

Love CT-shki, and remember the saying: "without CT - neither here nor there".))))

There are several reasons for this prevalence. First, its quality. Thanks to the conveyor belt method, which was revolutionary at the end of the sixties, the cost of production was reduced to a minimum with very good technical indicators. Hence the second advantage - an affordable price that allows the use of KT315 transistors in mass consumer and industrial electronics, as well as for amateur radio devices.

The plastic case did not imply high power, but was cheap.

The KT315 transistor was produced in two versions, flat (orange or yellow) and cylindrical (black).

The black transistor had a flat cut, if you place the transistor towards you, then the emitter is on the right, the collector is on the left, and the base is in the middle.

The KT315 transistor, one of the most popular domestic transistors, was put into production in 1967. Initially produced in a plastic case KT-13.

KT315 pinout

If you place the KT315 with the markings facing you with the pins down, then the left pin is the emitter, the central pin is the collector, and the right pin is the base.

Subsequently, KT315 began to be produced in the KT-26 package (foreign analogue of TO92), transistors in this package received an additional “1” in the designation, for example, KT315G1. The pinout of KT315 in this case is the same as in KT-13.

KT315 parameters

KT315 is a low-power silicon high-frequency bipolar transistor with n-p-n structure. It has a complementary analogue of KT361 with a p-n-p structure.
Both of these transistors were designed to work in amplifier circuits, both audio and intermediate and high frequencies.
But due to the fact that the characteristics of this transistor were breakthrough, and the cost is lower than the existing germanium analogues, KT315 has found the widest application in domestic electronic technology.

The cutoff frequency of the current transfer coefficient in a circuit with a common emitter ( f gr.) – 250 MHz.

The maximum allowable constant power dissipation of the collector without a heat sink ( P to max)

For KT315A, B, C, D, D, E - 0.15W;
For KT315Zh, I, N, R - 0.1W.

Maximum allowable DC collector current ( I to max)

For KT315A, B, C, D, D, E, N, R - 100 mA;
For KT315ZH, I - 50 mA.

Constant voltage base-emitter - 6 V.

The main electrical parameters of KT315, which depend on the letter, are given in the table.

U kbo- The maximum allowable collector-base voltage,
U cao- The maximum allowable collector-emitter voltage,
h 21e- Static current transfer coefficient of a bipolar transistor in a common emitter circuit,
I kbo- Collector reverse current.

name	U kbo and U keo, V	h 21e	I kbo, uA
KT315A	25	30-120	≤0,5
KT315B	20	50-350	≤0,5
KT315V	40	30-120	≤0,5
KT315G	35	50-350	≤0,5
KT315G1	35	100-350	≤0,5
KT315D	40	20-90	≤0,6
KT315E	35	50-350	≤0,6
KT315Zh	20	30-250	≤0,01
KT315I	60	≥30	≤0,1
KT315N	20	50-350	≤0,6
KT315R	35	150-350	≤0,5

Marking of transistors KT315 and KT361

It was with KT315 that the coded designation of domestic transistors began. I came across KT315 with full markings, but much more often with a single letter from the name shifted slightly to the left of the center, to the right of the letter was the logo of the plant that produced the transistor. KT361 transistors were also marked with one letter, but the letter was located in the center and there were dashes to the left and right of it.

And of course, KT315 has foreign analogues, for example: 2N2476, BSX66, TP3961, 40218.

KT315 pinout, KT315 parameters, KT315 characteristics: 20 comments

Greg
Yes, the legendary redhead couple! An attempt bequeathed by a legendary person - and we will go the other way. It didn't work, unfortunately. Well, it was necessary to think of it, to draw such uncomfortable conclusions, allowing bending in only one direction: this is probably not an engineering, but a political decision) But despite this, or maybe because of this, plus a bright festive color ... the brightest, entourage, stylish, brutal and unforgettable! I would give him both an Oscar and a Nobel Prize at once.
After changing the outfit - an ordinary, mediocre detail, among thousands of similar ones (
Threat Corps has changed because the production equipment, over time, was replaced with imported ones, and their machines are not designed for such candy.
1. admin Post Author
  The trouble was not that the leads were molded in only one plane (for example, in TO-247 cases, the leads are also flat), but that they were wide (width 0.95 mm, thickness 0.2 mm) and located close (gap 1 .55 mm). It was very inconvenient to breed the board - you can’t miss the path between the leads, and it was necessary to drill under the KT-13 with a 1.2 mm drill. For other components, 1 mm or even 0.8 mm was enough.
  KT315 was the first domestic transistor manufactured using planar epitaxial technology, then, after a couple of decades, it already became mediocre among younger counterparts. And of course, in the 80s, instead of KT315 / KT361, it was more convenient to put KT208 / KT209, KT502 / KT503 or KT3102 / KT3107, depending on what tasks the transistor faced.
  And I doubt that the KT-13 hull was a domestic invention, it seems like there were Japanese parts in such hulls, so most likely they unsuccessfully adopted someone else's experience ...
Greg
The East is a delicate matter... In the middle of the last century, there was a stubborn struggle between the superpowers for the redistribution of spheres of influence. Someone, Japan - bombs, and someone - technology. And the cunning Japanese accepted any help and grabbed everything they gave ... Then, of course, they chose the best, which means technological. They, uncreative people, won - Techno-Logic) The USSR not only built the first radio plant for them, but also the first automobile plant, for example. In the future, produced cars began to differ from ours no less than radio components. The question of priority here is debatable, because of the international friendship and compatibility of the then developments.
1. Vova
  The USSR sold licenses for the production of KT315 abroad, apparently the Japanese also bought one. And in general, the whole line for the production of KT315 from Voronezh was given to Poland. Apparently under the program to support the countries of the social camp.
Chupacabra
In terms of popularity, only MP42B can be compared with KT315.

I did not come across KT315 with strange letters, it turns out they were specialized transistors:
- KT315I were designed for switching circuits of segments of vacuum fluorescent indicators;
- KT315N were intended for use in color television;
- KT315R were designed for video recorders "Electronics-VM".
oleksander
Yes, not convenient conclusions, but there were no other transistors then. Recently, 20 years, these transistors are readily available, you can get them for free. It will not burn, it is good for beginners. Solder well on breadboards.
root
Yes, they have normal bodies. Flat, you can put dozens in one row at a minimum distance from each other, just like you can’t put transistors in TO-92. It is relevant when there are a lot of them on the board, for example, keys for multi-segment VLI. Tape leads (a tribute to the manufacturability of transistor production) also do not create any particular inconvenience, I do not see an urgent need to bend the leads in different directions. We do not bend the conclusions of microcircuits and this does not interfere with tracing at all.

I never thought about the width of the KT315 pins. I always drilled everything mainly with a 0.8 mm drill and 315_e (which I have a half-liter jar bought on the occasion on the market) always fell into place normally, without any violence on my part .
1. root
  Out of curiosity. I read on some site about the manufacture of the output stage of a powerful ultrasonic frequency converter on dozens of parallel KT315 and KT361. Transistors in one line with side surfaces to each other, and are clamped between aluminum plates with thermal paste. I don’t remember the characteristics of the amplifier, and the author of this design did not count on high sound quality when making UMZCH at 315_x as a technical curiosity.

Victor

"Sweet couple" - 315,361. So many things are soldered on them. As if they were made specifically for breadboards with their flat conclusions. I still feel warm when I take them in my hands. He grew up in times of scarcity. They lie in a box. Waiting for the grandson to grow up.

mobilandser

It was transistors of the 315 and 361 series that were used a lot in the old circuitry. By the way, I soldered a lot of things on them, but the location of the conclusions themselves is not very convenient. I would swap collector and emitter or base. then the board layout would be much more compact.

Greg
Duck, that's why he is red, so that everything is not like the majority) There, and with the technology of such an arrangement of conclusions, there are some difficulties, it is easier to make E_B_K than E_K_B, but for some reason they went for it. And the tape contact is unreasonably wide, which led to an unjustified increase in the body ... First pancake? Our response to Chamberlain? Failed Development Forecasting? False premises? History is silent, but I would like to look at patent and copyright documents, but this is also a mystery.

As far as I remember, in tape recorders, KT315-KT361 was replaced by KT208-KT209, KT502-KT503 and then KT3102-KT3107. If any of these transistors are available, you can try to select them according to the parameters, of course, the result is not guaranteed, and their cases are different.
If it’s not of sporting interest that everything be as the speaker designer intended, especially since all the transistors burned out in the amplifier, then I would insert some modern operational amplifier circuit board into the speaker.

Mitya

What can be replaced with these trans? For which transfers

Kemran

Hello everyone, I have a problem with these transits;

Greg
The admin already wrote, above, but I repeat, in more detail. The most appropriate, by most parameters, replacement for the KT315/KT361 pair is KT502/KT503. Suitable for most schematic solutions, even without recalculation of driving and corrective circuits. If the schematic emphasis is on key, discrete signal processing, you can use KT3102 / KT3107, which is often even better. KT208 / KT209 are also quite suitable. But, if used in analog amplification circuits, then it is better to correct the driving circuits.

Vladimir

In sound amplifiers, you can put MP41A and in a pair of MP37A instead of KT361 and, accordingly, KT315. Why with the letter A, the voltage for MP37A is 30 Volts, for other letters it is lower than 20 Volts. MP41 can be replaced by MP42, MP25, MP26, the last two have a minimum voltage of 25 and 40 Volts, so you need to look at the voltage of the power source. Usually 12 or 25 volts in older amps.

This article will focus on the definition of the main parameters of both domestic and foreign transistors according to the tables of color and symbolic color marking.

Transistor color coding

In this marking, colored dots are used to encode the parameters of transistors in the KT-26 (TO-92) and KTP-4 cases. With full color marking, the coding of the nominal value, group and date of issue is applied on the cut of the side surface according to the accepted color scheme.

The dot indicating the nominal value is applied in the upper left corner. She is the starting point. Further, three dots are applied clockwise, indicating the group, year and month of issue, respectively.

When color coding is reduced, the release date is omitted (indicated on the package insert). The nominal value is indicated on the cut of the side surface of the case. The group is indicated on the end of the case.

Symbolically - color marking of transistors

A distinctive feature of this marking is the absence of numbers and letters. The type rating of the transistor is indicated on the cut of the side surface with a special symbol (dots, horizontal, vertical or dotted lines) or a colored geometric figure (circle, semicircle, square, triangle, rhombus, etc.). The marking of the group refers to one (several) points on the end of the case (KT-26, KTP-4).

The color gamut of dots denoting a group for this marking does not match the standard color gamut according to GOST 24709-81. It is determined by the manufacturer.

The symbol of a circle on the side cut of the transistor must be distinguished from a dot, which does not have a clear shape, because. applied with a brush.

A number of foreign firms use color coding to indicate the gain of RF transistors. The table shows the color coding of MOTOROLLA RF transistors. It is possible either to apply an alphabetic code or a colored dot.

Silicon epitaxial-planar n-p-n transistors of the type KT315 and KT315-1 (a pair complementary to them). They are intended for use in amplifiers of high, intermediate and low frequencies, they are directly used in radio-electronic equipment manufactured for civil engineering and for export. Transistors KT315 and KT315-1 are produced in a plastic case with flexible leads. The KT315 transistor is manufactured in the KT-13 package. Subsequently, KT315 began to be produced in the KT-26 package (a foreign analogue of TO92), transistors in this package received an additional "1" in the designation, for example, KT315G1. The housing reliably protects the transistor crystal from mechanical and chemical damage. Transistors KT315H and KT315H1 are designed for use in color television. Transistors KT315P and KT315R1 are designed for use in the Electronics - VM video recorder. Transistors are manufactured in UHL climatic version and in a single version, suitable for both manual and automated assembly of equipment.

KT315 was produced by the following enterprises: Elektropribor, Fryazino, Kvazar, Kiev, Continent, Zelenodolsk, Quartzite, Ordzhonikidze, Elkor Production Association, Republic of Kabardino-Balkaria, Nalchik, NIIPP, Tomsk, Production Association "Electronics", Voronezh, in 1970 their production was also transferred to Poland to the Unitra CEMI enterprise.

Brief technical characteristics of transistors KT315 and KT315-1 are presented in table 1.

Table 1 - Brief technical characteristics of transistors KT315 and KT315-1

Type	Structure	P K max , P K * t. max, mW	f gr, MHz	U KBO max , U КЭR*max, IN	U EBO max , IN	I K max , mA	I KBO, uA	h 21e, h 21E*	C K, pF	r CE us, Ohm	r b, Ohm	τ to, ps
KT315A1	n-p-n	150	≥250	25	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315B1	n-p-n	150	≥250	20	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315В1	n-p-n	150	≥250	40	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315G1	n-p-n	150	≥250	35	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315D1	n-p-n	150	≥250	40	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315Е1	n-p-n	150	≥250	35	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315Zh1	n-p-n	100	≥250	15	6	100	≤0,5	30...250 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315I1	n-p-n	100	≥250	60	6	100	≤0,5	30 (10V; 1mA)	≤7	≤20	≤40	≤300
KT315H1	n-p-n	150	≥250	20	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	–	–	–
KT315R1	n-p-n	150	≥250	35	6	100	≤0,5	150...350 (10 V; 1 mA)	≤7	–	–	–
KT315A	n-p-n	150 (250*)	≥250	25	6	100	≤0,5	30...120* (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315B	n-p-n	150 (250*)	≥250	20	6	100	≤0,5	50...350* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315V	n-p-n	150 (250*)	≥250	40	6	100	≤0,5	30...120* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315G	n-p-n	150 (250*)	≥250	35	6	100	≤0,5	50...350* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315D	n-p-n	150 (250*)	≥250	40* (10k)	6	100	≤0,6	20...90 (10 V; 1 mA)	≤7	≤30	≤40	≤1000
KT315E	n-p-n	150 (250*)	≥250	35* (10k)	6	100	≤0,6	50...350* (10 V; 1 mA)	≤7	≤30	≤40	≤1000
KT315Zh	n-p-n	100	≥250	20* (10k)	6	50	≤0,6	30...250* (10 V; 1 mA)	≤7	≤25	–	≤800
KT315I	n-p-n	100	≥250	60* (10k)	6	50	≤0,6	≥30* (10V; 1mA)	≤7	≤45	–	≤950
KT315N	n-p-n	150	≥250	35* (10k)	6	100	≤0,6	50...350* (10 V; 1 mA)	≤7	≤5,5	–	≤1000
KT315R	n-p-n	150	≥250	35* (10k)	6	100	≤0,5	150...350* (10 V; 1 mA)	≤7	≤20	–	≤500

KT315 transistor dimensions

Figure 1 - Marking, pinout and overall dimensions of the KT315 transistor

Dimensions of the transistor KT315-1

Figure 2 - Marking, pinout and overall dimensions of the KT315-1 transistor

transistor pinout

Transistor marking

Transistor KT315. The type of transistor is indicated on the label, and the group was indicated in the form of a letter on the case of the device. The case indicates the full name of the transistor or only the letter, which is shifted to the left edge of the case. The trade mark of the plant may not be indicated. The date of issue is put in a digital or coded designation (in this case, only the year of issue can be indicated). The dot in the transistor marking indicates its applicability - as part of color television. The old (produced before 1971) KT315 transistors were marked with a letter in the middle of the case. At the same time, the first issues were marked with only one capital letter, and around 1971 they switched to the usual two-line. An example of marking a KT315 transistor is shown in Figure 1. It should also be noted that the KT315 transistor was the first mass coded transistor in a miniature plastic case KT-13. The vast majority of the KT315 and KT361 transistors (the characteristics are the same as those of the KT315, and the conductivity is p-n-p) were released in yellow or red-orange cases, pink, green and black transistors are much less common. In addition to the letter denoting the group, the trademark of the plant and the date of manufacture, the marking of transistors intended for sale also included a retail price, for example, “ts20k”, which meant the price of 20 kopecks.

Table 2 - Marking of the KT315-1 transistor with a code mark

transistor type	Marking mark on the cut side surface of the body	Marking mark at the end of the body
KT315A1	green triangle	red dot
KT315B1	green triangle	yellow dot
KT315В1	green triangle	green dot
KT315G1	green triangle	blue dot
KT315D1	green triangle	blue dot
KT315Е1	green triangle	white dot
KT315Zh1	green triangle	two red dots
KT315I1	green triangle	two yellow dots
KT315H1	green triangle	two green dots
KT315R1	green triangle	two blue dots

Instructions for the use and operation of transistors

External influencing factors

Transistor Reliability

Foreign analogues of the transistor KT315

Foreign analogues of the KT315 transistor are shown in Table 3. Technical information (datasheet) for foreign analogues of the KT315 transistor can also be downloaded from the table below. The prices below are as of 08.2018.

Table 3 - Foreign analogues of the KT315 transistor

Domestic transistor	Opportunity buy	Company manufacturer	A country manufacturer
KT315A	No	Unitra CEMI	Poland
KT315B	No	Unitra CEMI	Poland
KT315V	No	Unitra CEMI	Poland
KT315G	No	Unitra CEMI	Poland
KT315D	There is	Hitachi	Japan
KT315E	yes ~ 4$	Central Semiconductor	USA
KT315Zh	yes ~ 9$	Sprague electric corp.	USA
KT315Zh	There is	ITT Intermetall GmbH	Germany
KT315I	yes ~ 16$	New Jersey Semiconductor	USA
KT315I	There is	Sony	Japan
KT315N	yes ~ 1$	Sony	Japan
KT315R	No	Unitra CEMI	Poland

The foreign prototype of the KT315-1 transistor is the 2SC544, 2SC545, 2SC546 transistors, Sanyo Electric, Japan. Transistors 2SC545, 2SC546 can also be purchased, the estimated price is about $6.

Main technical characteristics

Table 4 - Electrical parameters of KT315 transistors upon acceptance and delivery

Parameter name (measurement mode) units	Letter designation	Norm parameter		Temperature, °C
		at least	no more
Limit voltage (I C =10 mA), V KT315A, KT315B, KT315Zh, KT315N KT315V, KT315D, KT315I KT315G, KT315E, KT315R	U (CEO)	15 30 25	–	25
(I C =20 mA, I B =2 mA), V KT315A, KT315B, KT315V, KT315G, KT315R KT315D, KT315E KT315Zh KT315I	U CEsat	–	0,4 0,6 0,5 0,9
Collector-emitter saturation voltage (I C \u003d 70 mA, I B \u003d 3.5 mA), V KT315N	U CEsat	–	0,4
Base-emitter saturation voltage (I C =20 mA, I B =2 mA), V KT315A, KT315B, KT315V, KT315G, KT315N, KTZ I5P KT315D, KT315E KT315Zh KT315I	U BEsat	–	1,0 1,1 0,9 1,35
KT315A, KT315B, KT315V, KT315G, KT315N, KT315R KT315D, KT315E, KT315J, KG315I	I CBO	–	0,5 0,6	25, -60
Reverse collector current (U CB \u003d 10 V), μA KT3I5A KT315B, KT315V, KT315G, KT315N, KT315R KT315D, KT315E	I CBO	–	10 15	100
Reverse emitter current (U EB \u003d 5 V) μA KT315A - KG315E, KT315Zh, XT315N KT315I KT315R	I EBO	–	30 50 3	25
, (R BE =10 kOhm U CE =25 V), mA, KT3I5A (R BE \u003d 10 kOhm U CE \u003d 20 V), mA, KT315B, KT315N (R BE \u003d 10 kOhm U CE \u003d 40 V), mA KT315V (R BE \u003d 10 kOhm U CE \u003d 35 V), mA, KT315G (R BE \u003d 10 kOhm U CE \u003d 40 V), mA, KT315D (R BE \u003d 10 kOhm U CE \u003d 35 V), mA, KT315E	I CER	–	0,6 0,6 0,6 0,6 1,0 1,0 0,005	25
Collector-emitter reverse current (R BE \u003d 10 kOhm U CE \u003d 35 V), mA, KT315R	I CER	–	0,01	100
Collector-emitter reverse current (U CE =20 V), mA, KT315ZH (U CE =60 V), mA, KT315I	I CES	–	0,01 0,1	25, -60
Collector-emitter reverse current (U CE =20 V), mA, KT3I5Ж (U CE =60 V), mA, KT3I5I	I CES	–	0,1 0,2	100
Static current transfer ratio (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KT315D KT315Zh KT315I KT315R	h 21E	30 50 20 30 30 150	120 350 90 250 – 350	25
Static current transfer ratio (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KTZ15B, KT315G, KT315E, KT315N KT315D KT315Zh KT315I KT315R	h 21E	30 50 20 30 30 150	250 700 250 400 – 700	100
Static current transfer ratio (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KTZ15B, KT315G, KT315E, KT315N KT315D KT315Zh KT315I KT315R	h 21E	5 15 5 5 5 70	120 350 90 250 – 350	-60
Current transfer ratio module at high frequency (U CB = 10 V, I E = 5 mA, f = 100 MHz)	\|h 21E \|	2,5	–	25
collector junction capacitance (UCB = 10 V, f = 10 MHz), pF	C C	–	7	25

Table 5 - Maximum permissible operating modes of the KT315 transistor

Parameter, unit	Designation	Parameter norm
		KG315A	KG315B	KG315V	KG315G	KTZ15D	KG315E	KG315J	KG315I	KT315N	KT315R
Max. allowable DC collector-emitter voltage, (R BE = 10 kOhm), V 1)	U CERmax	25	20	40	35	40	35	–	–	20	35
Max. allowable constant collector-emitter voltage in the event of a short circuit in the emitter-base circuit, V 1)	U CES max	–	–	–	–	–	–	20	60	–	–
Max. allowable DC voltage collector-base, V 1)	U CB max	25	20	40	35	40	35	–	–	20	35
Max. allowable constant voltage emitter-base, V 1)	U EB max	6	6	6	6	6	6	6	6	6	6
Max. permissible DC collector current, mA 1)	I Cmax	100	100	100	100	100	100	100	100	100	100
Max. permissible constant power dissipation of the collector, mW 2)	PC max	200	200	200	200	200	200	200	200	200	200
Max. allowable transition temperature, ⁰С	t j max	125	125	125	125	125	125	125	125	125	125

Note:
1. For the entire operating temperature range.
2. At t atv from minus 60 to 25 °С. When the temperature rises above 25 °C, P C max is calculated by the formula:

where R t hjα is the total thermal resistance of the transition-environment, equal to 0.5 °C/mW.

Figure 3 - Typical input characteristic of transistors KT315A - KT315I, KT315N, KT315R

Figure 4 - Typical input characteristic of transistors KT315A - KT315I, KT315N, KT315R
at U CE \u003d 0, t atv \u003d (25 ± 10) ° С

Figure 5 - Typical output characteristics of transistors such as KT315A, KT315V, KT315D, KT315I
at t atv = (25±10) °С

Figure 6 - Typical output characteristics of transistors such as KT315B, KT315G, KT315E, KT315N
at t atv = (25±10) °С

Figure 7 - Typical output characteristics
transistor KT315Zh at t atv = (25±10) °С

Figure 8 - Typical output characteristics
transistor KT315R at t atv = (25±10) °С

Figure 10 - Dependence of the base-emitter saturation voltage on the DC collector current for transistors of the KT315A type - KT315I, KT315N, KT315R at I C / I B = 10, t atv = (25 ± 10) ° С

Figure 11 - Dependence of the static current transfer coefficient on the constant current of the emitter for transistors KT315A, KT315V, KT315D, KT315I at U CB = 10,
t atv \u003d (25 ± 10) ° С

Figure 12 - Dependence of the static current transfer coefficient on the direct current of the emitter for transistors KT315B, KT315G, KT315E, KT315N at U CB = 10,
t atv \u003d (25 ± 10) ° С

Figure 13 - Dependence of the static current transfer coefficient on the constant current of the emitter for the transistor KT315Zh at U CB = 10, t atv = (25±10) °С

Figure 14 - Dependence of the static current transfer coefficient on the constant current of the emitter for the KT315R transistor at U CB = 10, t atv = (25 ± 10) ° С

Figure 15 - Dependence of the module of the current transfer coefficient at high frequency on the direct current of the emitter at U CB = 10, f = 100 MHz, t atv = (25±10) °С

Figure 16 - Dependence of the time constant of the feedback circuit at high frequency on the collector-base voltage at I E = 5 mA, t atv = (25 ± 10) ° С for KT315A

Figure 18 - Dependence of the time constant of the feedback circuit at high frequency on the emitter current at U CB = 10 V, f = 5 MHz, t atv = (25 ± 10) ° С for
KT315A